| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
PJA733CX |
50V; 100mA; PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2852 |
PJB649ACK |
180V; 3A; PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2853 |
PJB772CK |
50V; 600mA; PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2854 |
PJB772SCT |
50V; 600mA; PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2855 |
PJC945CT |
60V; 120mA; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2856 |
PJC945CX |
60V; 120mA; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2857 |
PJD1616ACT |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2858 |
PJD1616ACX |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2859 |
PJD1616CCT |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2860 |
PJD1616CCX |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2861 |
PJD669ACK |
180V; 1.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2862 |
PJD882CK |
40V; 3A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2863 |
PJD882CT |
40V; 3A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2864 |
PJE8050CT |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2865 |
PJE8050CX |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2866 |
PJE8550CT |
20V; 0.5A; PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2867 |
PJP110ACZ |
20V; 10A; PNP epitaxial silicon darlington transistor |
PROMAX-JOHNTON |
| 2868 |
PJP168ACZ |
20V; 18A; PNP epitaxial silicon darlington transistor |
PROMAX-JOHNTON |
| 2869 |
RUR-D1610 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 100V. |
General Electric Solid State |
| 2870 |
RUR-D1615 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 150V. |
General Electric Solid State |
| 2871 |
RUR-D1620 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 200V. |
General Electric Solid State |
| 2872 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
| 2873 |
RUR-D815 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V. |
General Electric Solid State |
| 2874 |
RUR-D820 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V. |
General Electric Solid State |
| 2875 |
S3006C |
GaAs epitaxial schottky barrier diode |
TOSHIBA |
| 2876 |
S3006D |
GaAs epitaxial schottky barrier diode |
TOSHIBA |
| 2877 |
S3006E |
GaAs epitaxial schottky barrier diode |
TOSHIBA |
| 2878 |
S3015A |
Silicon epitaxial step recovery diode |
TOSHIBA |
| 2879 |
S3015B |
Silicon epitaxial step recovery diode |
TOSHIBA |
| 2880 |
SB30-03P |
Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier |
SANYO |
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