| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
TTC004 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2852 |
TTC004B |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2853 |
TTC005 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2854 |
TTC007 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2855 |
TTC008 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2856 |
TTC009 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2857 |
TTC011 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2858 |
TTC012 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2859 |
TTC013 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2860 |
TTC014 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2861 |
TTC3710B |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2862 |
TTC5200 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2863 |
TTD1409B |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2864 |
TTD1410B |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2865 |
TTD1415B |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2866 |
U4793B |
2 comparators, 44-mV threshold, glow-plug application |
Atmel |
| 2867 |
UMX9989AP |
MRI Fast Switching AP |
Microsemi |
| 2868 |
VEC2611 |
Integrated P- and N-Channel MOSFETs for General Purpose Switching Applications |
ON Semiconductor |
| 2869 |
WM8144-10 |
Integrated 10-bit Data Acquisition system for Imaging Applications |
Wolfson |
| 2870 |
WM8144-10CFT/V |
Integrated 10-bit Data Acquisition system for Imaging Applications |
Wolfson |
| 2871 |
WM8144-12 |
Integrated 12-bit Data Acquisition System for Imaging Applications |
Wolfson |
| 2872 |
WM8144-12CFT/V |
Integrated 12-bit Data Acquisition System for Imaging Applications |
Wolfson |
| 2873 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
| | | |
