| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
| 2852 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
| 2853 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 2854 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 2855 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 2856 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 2857 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 2858 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 2859 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
| 2860 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 2861 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 2862 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 2863 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 2864 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 2865 |
MJ901 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 2866 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2867 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2868 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2869 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2870 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2871 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2872 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2873 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 2874 |
MM5559 |
Serial-to-parallel converter |
National Semiconductor |
| 2875 |
MM74HC164 |
8-Bit Serial-in/Parallel-out Shift Register |
Fairchild Semiconductor |
| 2876 |
MM74HC164 |
8-Bit Serial-in/Parallel-out Shift Register |
National Semiconductor |
| 2877 |
MM74HC164M |
8-Bit Serial-in/Parallel-out Shift Register |
Fairchild Semiconductor |
| 2878 |
MM74HC164MTC |
8-Bit Serial-in/Parallel-out Shift Register |
Fairchild Semiconductor |
| 2879 |
MM74HC164MTCX |
8-Bit Serial-in/Parallel-out Shift Register |
Fairchild Semiconductor |
| 2880 |
MM74HC164MTCX_NL |
8-Bit Serial-in/Parallel-out Shift Register |
Fairchild Semiconductor |
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