| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2852 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2853 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2854 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2855 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2856 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2857 |
2N6550 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 2858 |
2N6649E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2859 |
2N6650E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2860 |
2N7370E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2861 |
2N7371E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2862 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2863 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2864 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 2865 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 2866 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2867 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2868 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 2869 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 2870 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 2871 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 2872 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 2873 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 2874 |
2SA49 |
Germanium PNP alloy junction transistor |
TOSHIBA |
| 2875 |
2SA52 |
Germanium PNP alloy junction transistor, AM Frequency Converter Applications |
TOSHIBA |
| 2876 |
2SA52 |
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR |
Unknow |
| 2877 |
2SA53 |
Germanium PNP alloy junction transistor |
TOSHIBA |
| 2878 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 2879 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 2880 |
2SB172 |
GE PNP ALLOY JUNCTION |
Unknow |
| | | |
