| No. |
Part Name |
Description |
Manufacturer |
| 28741 |
HER302G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=100V, VR=100V, IO=3A |
Comchip Technology |
| 28742 |
HER302G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=100V, VR=100V, IO=3A |
Comchip Technology |
| 28743 |
HER303G |
200 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 28744 |
HER303G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=200V, VR=200V, IO=3A |
Comchip Technology |
| 28745 |
HER303G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=200V, VR=200V, IO=3A |
Comchip Technology |
| 28746 |
HER304G |
300 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 28747 |
HER304G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=300V, VR=300V, IO=3A |
Comchip Technology |
| 28748 |
HER304G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=300V, VR=300V, IO=3A |
Comchip Technology |
| 28749 |
HER305G |
400 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 28750 |
HER305G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=400V, VR=400V, IO=3A |
Comchip Technology |
| 28751 |
HER305G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=400V, VR=400V, IO=3A |
Comchip Technology |
| 28752 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
| 28753 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
| 28754 |
HER306G |
600 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 28755 |
HER306G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=600V, VR=600V, IO=3A |
Comchip Technology |
| 28756 |
HER306G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=600V, VR=600V, IO=3A |
Comchip Technology |
| 28757 |
HER307G |
800 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 28758 |
HER307G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=800V, VR=800V, IO=3A |
Comchip Technology |
| 28759 |
HER307G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=800V, VR=800V, IO=3A |
Comchip Technology |
| 28760 |
HER308G |
1000 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
| 28761 |
HER308G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=1000V, VR=1000V, IO=3A |
Comchip Technology |
| 28762 |
HER308G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=1000V, VR=1000V, IO=3A |
Comchip Technology |
| 28763 |
HG62E101 |
0.3-6.7 V, master slice CMOS gate array |
Hitachi Semiconductor |
| 28764 |
HG62E130 |
0.3-6.7 V, master slice CMOS gate array |
Hitachi Semiconductor |
| 28765 |
HG62E182 |
0.3-6.7 V, master slice CMOS gate array |
Hitachi Semiconductor |
| 28766 |
HG62E240 |
0.3-6.7 V, master slice CMOS gate array |
Hitachi Semiconductor |
| 28767 |
HGT1N30N60A4D |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 28768 |
HGT1N40N60A4D |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 28769 |
HGT1S10N120BNS |
35A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 28770 |
HGT1S10N120BNST |
1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
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