No. |
Part Name |
Description |
Manufacturer |
2881 |
BF511 |
N-channel silicon FET |
NXP Semiconductors |
2882 |
BF512 |
N-channel silicon FET |
NXP Semiconductors |
2883 |
BF513 |
N-channel silicon FET |
NXP Semiconductors |
2884 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
2885 |
BF545A |
N-channel FET |
NXP Semiconductors |
2886 |
BF545B |
N-channel FET |
NXP Semiconductors |
2887 |
BF545C |
N-channel FET |
NXP Semiconductors |
2888 |
BF556A |
N-channel FET |
NXP Semiconductors |
2889 |
BF556B |
N-channel FET |
NXP Semiconductors |
2890 |
BF556C |
N-channel FET |
NXP Semiconductors |
2891 |
BF861 |
N-channel junction FETs |
Philips |
2892 |
BF861A |
N-channel FET |
NXP Semiconductors |
2893 |
BF861A |
N-channel junction FETs |
Philips |
2894 |
BF861B |
N-channel FET |
NXP Semiconductors |
2895 |
BF861B |
N-channel junction FETs |
Philips |
2896 |
BF861C |
N-channel FET |
NXP Semiconductors |
2897 |
BF861C |
N-channel junction FETs |
Philips |
2898 |
BF862 |
N-channel junction FET |
NXP Semiconductors |
2899 |
BF862 |
N-channel junction FET |
Philips |
2900 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
2901 |
BFR30 |
N-channel FET |
NXP Semiconductors |
2902 |
BFR31 |
N-channel FET |
NXP Semiconductors |
2903 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
2904 |
BFT46 |
N-channel FET |
NXP Semiconductors |
2905 |
BFT46 |
N-channel silicon FET |
Philips |
2906 |
BFW10 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
2907 |
BFW11 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
2908 |
BFW13 |
N-CHANNEL SILICON FET DEPLETION MODE |
Advanced Semiconductor |
2909 |
BFW61 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
2910 |
BQ24001 |
Li-Ion Linear (4.1V & 4.2V) Charge Management IC For One-Cell Applications W/Integrated FET, One LED |
Texas Instruments |
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