| No. |
Part Name |
Description |
Manufacturer |
| 2881 |
BA6110 |
Voltage controlled operational amplifier |
ROHM |
| 2882 |
BA6110FS |
Voltage controlled operational amplifier |
ROHM |
| 2883 |
BAL-CC1101-01D3 |
50Ω nominal input / conjugate match balun to CC1101, with integrated harmonic filter |
ST Microelectronics |
| 2884 |
BAL-CC1101-01D3 |
50Ω nominal input / conjugate match balun to CC1101, with integrated harmonic filter |
ST Microelectronics |
| 2885 |
BAT14-110D |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 2886 |
BAT14-110S |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 2887 |
BAT15-110D |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 2888 |
BAT15-110R |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 2889 |
BAT15-110S |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 2890 |
BB110 |
Variable capacitance diode |
Mullard |
| 2891 |
BB110 |
Silicon Planar Variable Capacitance Diode |
Philips |
| 2892 |
BB110B |
Variable capacitance diode |
mble |
| 2893 |
BB110G |
Variable capacitance diode |
mble |
| 2894 |
BB1110B |
DDR SDRAM TERMINATOR NETWORKS. |
BI Technologies |
| 2895 |
BB1110TB |
DDR SDRAM TERMINATOR NETWORKS. |
BI Technologies |
| 2896 |
BB2110DI |
DDR SDRAM TERMINATOR NETWORKS. |
BI Technologies |
| 2897 |
BBD110DWT1 |
7 V, dual schottky barrier diode |
Leshan Radio Company |
| 2898 |
BC107 |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 110 - 450 hFE. |
Continental Device India Limited |
| 2899 |
BC107A |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 110 - 220 hFE. |
Continental Device India Limited |
| 2900 |
BC108 |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110 - 800 hFE. |
Continental Device India Limited |
| 2901 |
BC108A |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110 - 220 hFE. |
Continental Device India Limited |
| 2902 |
BC110 |
Silicon NPN Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
| 2903 |
BC110 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2904 |
BC110 |
Transistor NPN |
Siemens |
| 2905 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 2906 |
BC317 |
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110 - 450 hFE |
Continental Device India Limited |
| 2907 |
BC317A |
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110 - 220 hFE |
Continental Device India Limited |
| 2908 |
BC546A |
0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 110 - 220 hFE |
Continental Device India Limited |
| 2909 |
BC547 |
0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110 - 800 hFE |
Continental Device India Limited |
| 2910 |
BC547A |
0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110 - 220 hFE |
Continental Device India Limited |
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