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Datasheets for CORPORAT

Datasheets found :: 127165
Page: | 93 | 94 | 95 | 96 | 97 | 98 | 99 | 100 | 101 |
No. Part Name Description Manufacturer
2881 2SC2904 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2882 2SC2905 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2883 2SC2932 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2884 2SC2933 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2885 2SC3001 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2886 2SC3017 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2887 2SC3018 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2888 2SC3019 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2889 2SC3020 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2890 2SC3021 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2891 2SC3022 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2892 2SC3052 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
2893 2SC3053 150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 Isahaya Electronics Corporation
2894 2SC3101 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2895 2SC3102 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2896 2SC3103 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2897 2SC3104 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2898 2SC3105 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2899 2SC3133 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
2900 2SC3240 MITSUBISHI RF POWER TRANSISTOR Mitsubishi Electric Corporation
2901 2SC3241 MITSUBISHI RF POWER TRANSISTOR Mitsubishi Electric Corporation
2902 2SC3242 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 Isahaya Electronics Corporation
2903 2SC3242A 900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A Isahaya Electronics Corporation
2904 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation
2905 2SC3244 900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 Isahaya Electronics Corporation
2906 2SC3245 900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 Isahaya Electronics Corporation
2907 2SC3245A 900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A Isahaya Electronics Corporation
2908 2SC3246 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 Isahaya Electronics Corporation
2909 2SC3247 FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
2910 2SC3249 FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION Isahaya Electronics Corporation


Datasheets found :: 127165
Page: | 93 | 94 | 95 | 96 | 97 | 98 | 99 | 100 | 101 |



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