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Datasheets for D FO

Datasheets found :: 3844
Page: | 93 | 94 | 95 | 96 | 97 | 98 | 99 | 100 | 101 |
No. Part Name Description Manufacturer
2881 MRF817 2.5W - 900MHz RF Power Transistor NPN Silicon designed for 13.6V Motorola
2882 MS457A RED FOUR DIGIT NUMERIC DISPLAY Micro Electronics
2883 MSC1002M Low level Class C transistor designed for avionics driver applications SGS Thomson Microelectronics
2884 MSC1002MP Low level Class C transistor designed for avionics driver applications SGS Thomson Microelectronics
2885 MSC4001 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
2886 MSC4003 Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz SGS Thomson Microelectronics
2887 MSC80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
2888 MSC81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
2889 MSC81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
2890 MSC81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
2891 MSC81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
2892 MSC81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
2893 MSC81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
2894 MSC81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
2895 MSC81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
2896 MSD6101 Silicon epitaxial dual discriminator diode designed for use in FM discriminator applications Motorola
2897 MSD6102 Silicon epitaxial dual diode designed for use as a horizontal phase detector for television receivers Motorola
2898 MSD6150 Silicon epitaxial dual diode designed for consumer applications Motorola
2899 MSM9026 Emulation Board for S1207 Mosel Vitelic Corp
2900 MSP430BT5190 16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 Texas Instruments
2901 MSP430BT5190IPZ 16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 100-LQFP -40 to 85 Texas Instruments
2902 MSP430BT5190IPZR 16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 100-LQFP -40 to 85 Texas Instruments
2903 MSP430BT5190IZQWR 16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 Texas Instruments
2904 MSP430BT5190IZQWT 16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 Texas Instruments
2905 MTE1100 Infrared LED for photo sensor. GaAs infrared emitted. Marktech Optoelectronics
2906 MU4891 Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits Motorola
2907 MU4892 Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits Motorola
2908 MU4893 Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits Motorola
2909 MU4894 Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits Motorola
2910 MUR460 600V; 40A super-fast rectifier. Ideally suited for automated assembly Diodes


Datasheets found :: 3844
Page: | 93 | 94 | 95 | 96 | 97 | 98 | 99 | 100 | 101 |



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