No. |
Part Name |
Description |
Manufacturer |
2881 |
MRF817 |
2.5W - 900MHz RF Power Transistor NPN Silicon designed for 13.6V |
Motorola |
2882 |
MS457A |
RED FOUR DIGIT NUMERIC DISPLAY |
Micro Electronics |
2883 |
MSC1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
2884 |
MSC1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
2885 |
MSC4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
2886 |
MSC4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
2887 |
MSC80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
2888 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
2889 |
MSC81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
2890 |
MSC81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
2891 |
MSC81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
2892 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
2893 |
MSC81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
2894 |
MSC81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
2895 |
MSC81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
2896 |
MSD6101 |
Silicon epitaxial dual discriminator diode designed for use in FM discriminator applications |
Motorola |
2897 |
MSD6102 |
Silicon epitaxial dual diode designed for use as a horizontal phase detector for television receivers |
Motorola |
2898 |
MSD6150 |
Silicon epitaxial dual diode designed for consumer applications |
Motorola |
2899 |
MSM9026 |
Emulation Board for S1207 |
Mosel Vitelic Corp |
2900 |
MSP430BT5190 |
16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
2901 |
MSP430BT5190IPZ |
16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 100-LQFP -40 to 85 |
Texas Instruments |
2902 |
MSP430BT5190IPZR |
16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 100-LQFP -40 to 85 |
Texas Instruments |
2903 |
MSP430BT5190IZQWR |
16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
2904 |
MSP430BT5190IZQWT |
16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
2905 |
MTE1100 |
Infrared LED for photo sensor. GaAs infrared emitted. |
Marktech Optoelectronics |
2906 |
MU4891 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
2907 |
MU4892 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
2908 |
MU4893 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
2909 |
MU4894 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
2910 |
MUR460 |
600V; 40A super-fast rectifier. Ideally suited for automated assembly |
Diodes |
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