| No. |
Part Name |
Description |
Manufacturer |
| 2881 |
IXTA1N100 |
High Voltage MOSFET |
IXYS Corporation |
| 2882 |
IXTK21N100 |
High Voltage MegaMOSTMFETs |
IXYS Corporation |
| 2883 |
IXTN21N100 |
High Voltage MegaMOSTMFETs |
IXYS Corporation |
| 2884 |
IXTP01N100 |
High Voltage MOSFET |
IXYS Corporation |
| 2885 |
IXTP01N100D |
High Voltage MOSFET |
IXYS Corporation |
| 2886 |
IXTP1N100 |
High Voltage MOSFET |
IXYS Corporation |
| 2887 |
JAN1524J |
Voltage Mode PWMs |
Microsemi |
| 2888 |
JAN1525AJ |
Voltage Mode PWMs |
Microsemi |
| 2889 |
JAN1526BJ |
Voltage Mode PWMs |
Microsemi |
| 2890 |
JAN1527AJ |
Voltage Mode PWMs |
Microsemi |
| 2891 |
K100F |
10000 V rectifier 1.5-3 A forward current, 200 ns recovery time |
Voltage Multipliers |
| 2892 |
K100S |
10000 V rectifier 1.5-3 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 2893 |
K100UF |
10000 V rectifier 1.5-3 A forward current, 100 ns recovery time |
Voltage Multipliers |
| 2894 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2895 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2896 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2897 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2898 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2899 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2900 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2901 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 2902 |
K25S |
1.5A - 3.0A Forward Current / 3000 ns Recovery Time |
Voltage Multipliers |
| 2903 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2904 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2905 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 2906 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 2907 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2908 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 2909 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 2910 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
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