No. |
Part Name |
Description |
Manufacturer |
2881 |
150KR60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
2882 |
150KR60A |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
2883 |
150KR80 |
Diode Switching 800V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
2884 |
150KR80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
2885 |
150KR80A |
Diode Switching 800V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
2886 |
150KS10 |
Diode Switching 100V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2887 |
150KS20 |
Diode Switching 200V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2888 |
150KS30 |
Diode Switching 300V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2889 |
150KS40 |
Diode Switching 400V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2890 |
150KS60 |
Diode Switching 600V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2891 |
150KSR10 |
Diode Switching 100V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2892 |
150KSR20 |
Diode Switching 200V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2893 |
150KSR30 |
Diode Switching 300V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2894 |
150KSR40 |
Diode Switching 400V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2895 |
150KSR60 |
Diode Switching 600V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
2896 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
2897 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
2898 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
2899 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
2900 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
2901 |
15102GOA |
Silicon Controlled Rectifier |
Microsemi |
2902 |
15104GOA |
Silicon Controlled Rectifier |
Microsemi |
2903 |
15106GOA |
Silicon Controlled Rectifier |
Microsemi |
2904 |
15108GOA |
Silicon Controlled Rectifier |
Microsemi |
2905 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
2906 |
15110GOA |
Silicon Controlled Rectifier |
Microsemi |
2907 |
15112GOA |
Silicon Controlled Rectifier |
Microsemi |
2908 |
1526(1) |
OFF-THE-LINE Half Wave Selenium Rectifier |
ITT Semiconductors |
2909 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
2910 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| | | |