| No. |
Part Name |
Description |
Manufacturer |
| 2881 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2882 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2883 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2884 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2885 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2886 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2887 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2888 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2889 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2890 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2891 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2892 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2893 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2894 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2895 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2896 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 2897 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 2898 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 2899 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2900 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 2901 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2902 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2903 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2904 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2905 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2906 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2907 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2908 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2909 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 2910 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
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