| No. |
Part Name |
Description |
Manufacturer |
| 2911 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 2912 |
KM416V1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 2913 |
KM416V1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 2914 |
KM416V1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 2915 |
KM416V1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 2916 |
KM416V1204CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 2917 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 2918 |
KM416V1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 2919 |
KM416V1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 2920 |
KM416V1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 2921 |
KM416V1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 2922 |
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2923 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 2924 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 2925 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 2926 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 2927 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 2928 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 2929 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 2930 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 2931 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 2932 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 2933 |
KM416V254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 2934 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 2935 |
KM416V256D |
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2936 |
KM416V256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
| 2937 |
KM416V256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V |
Samsung Electronic |
| 2938 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 2939 |
KM416V256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 2940 |
KM416V256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
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