No. |
Part Name |
Description |
Manufacturer |
2911 |
PUB4519 |
Composite Device - Power Transistor Arrays |
Panasonic |
2912 |
PUB4701 |
Composite Device - Power Transistor Arrays |
Panasonic |
2913 |
PUB4702 |
Composite Device - Power Transistor Arrays |
Panasonic |
2914 |
PUB4753 |
Composite Device - Power Transistor Arrays |
Panasonic |
2915 |
PZ1721B12U |
Microwave Power Transistor for Broadband |
Philips |
2916 |
PZ2024B10U |
Microwave Power Transistor for Broadband |
Philips |
2917 |
Q62702-C2517 |
PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
2918 |
Q62702-C2596 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) |
Siemens |
2919 |
Q62702-C2597 |
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
2920 |
Q62702-D1336 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
2921 |
Q62702-D1338 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
2922 |
Q62702-D1340 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
2923 |
Q62702-D1342 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
2924 |
Q62702-D1344 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
Siemens |
2925 |
QM10HB-2H |
MITSUBISHI TRANSISTOR MODULES DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
Mitsubishi Electric Corporation |
2926 |
QM30HQ-24 |
MITSUBISHI TRANSISTOR MODULES DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
Mitsubishi Electric Corporation |
2927 |
RCA-2N5470 |
Microwave Amplifiers and Oscillators Using the RCA-2N5470 Power Transistor - Application Note |
RCA Solid State |
2928 |
RCA-2N6093 |
Use of the RCA-2N6093 HF Power Transistor in Linear Applications - App. Note |
RCA Solid State |
2929 |
RF1029 |
Linear UHF Power Transistor up to 1GHz |
Motorola |
2930 |
RF1030 |
Linear UHF Power Transistor up to 1GHz 3W |
Motorola |
2931 |
RF1031 |
Linear UHF Power Transistor up to 1GHz 4.5W |
Motorola |
2932 |
RF1032 |
Linear UHF Power Transistor up to 1GHz 6W |
Motorola |
2933 |
ROS380 |
npn silicon medium power transistor for medium current switching |
ICCE |
2934 |
SD1441 |
175MHz 12.5V 150W NPN RF Power Transistor for VHF mobile communications |
SGS Thomson Microelectronics |
2935 |
SD1464 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
2936 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
2937 |
SD1520-8 |
NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
2938 |
SD1801 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
2939 |
SD1803 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
2940 |
SD1805 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
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