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Datasheets for END

Datasheets found :: 7493
Page: | 94 | 95 | 96 | 97 | 98 | 99 | 100 | 101 | 102 |
No. Part Name Description Manufacturer
2911 KM416V1204CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2912 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
2913 KM416V1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
2914 KM416V1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
2915 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2916 KM416V1204CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2917 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2918 KM416V1204CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2919 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
2920 KM416V1204CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2921 KM416V1204CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2922 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
2923 KM416V1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
2924 KM416V1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
2925 KM416V254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2926 KM416V254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
2927 KM416V254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic
2928 KM416V254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Samsung Electronic
2929 KM416V254DJL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Samsung Electronic
2930 KM416V254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Samsung Electronic
2931 KM416V254DJL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Samsung Electronic
2932 KM416V254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
2933 KM416V254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic
2934 KM416V254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Samsung Electronic
2935 KM416V254DTL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Samsung Electronic
2936 KM416V254DTL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Samsung Electronic
2937 KM416V254DTL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Samsung Electronic
2938 KM416V4004B 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2939 KM416V4004BS-45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Samsung Electronic
2940 KM416V4004BS-5 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Samsung Electronic


Datasheets found :: 7493
Page: | 94 | 95 | 96 | 97 | 98 | 99 | 100 | 101 | 102 |



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