| No. |
Part Name |
Description |
Manufacturer |
| 2911 |
2SD2012 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 2912 |
2SD2028 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amplifier Applications |
SANYO |
| 2913 |
2SD2030 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2914 |
2SD2031 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2915 |
2SD2088 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 2916 |
2SD2108 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 2917 |
2SD2121L |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2918 |
2SD2121S |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2919 |
2SD2122L |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2920 |
2SD2122S |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2921 |
2SD2123L |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2922 |
2SD2123S |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2923 |
2SD2130 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 2924 |
2SD2135 |
Power Transistor - Silicon NPN Epitaxial Planar Darlington Type - AF Amplifier |
Panasonic |
| 2925 |
2SD2142KT146 |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
| 2926 |
2SD2155 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2927 |
2SD2206 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 2928 |
2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
NEC |
| 2929 |
2SD2228 |
NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER |
NEC |
| 2930 |
2SD2247 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2931 |
2SD2263 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2932 |
2SD227 |
Medium Power Amplifiers and Switches |
Unknow |
| 2933 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 2934 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 2935 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 2936 |
2SD235 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 2937 |
2SD2352 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2938 |
2SD2353 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2939 |
2SD2384 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 2940 |
2SD2385 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
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