| No. |
Part Name |
Description |
Manufacturer |
| 2911 |
BFG135A |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
| 2912 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 2913 |
BFG235 |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
| 2914 |
BFP136 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 2915 |
BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems |
Infineon |
| 2916 |
BFP136W |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 2917 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 2918 |
BFR34A |
NPN transistor for low noise RF amplifier applications |
Siemens |
| 2919 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 2920 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 2921 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 2922 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 2923 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 2924 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 2925 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 2926 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 2927 |
BFS86 |
Silicon NPN epitaxial planar transistor for VHF/UHF power stages, oscillators and driver stages. Especially for aerial amplifier circuits |
AEG-TELEFUNKEN |
| 2928 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 2929 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 2930 |
BFX60 |
NPN transistor for RF amplifier stages |
Siemens |
| 2931 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 2932 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 2933 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 2934 |
BGA3012 |
1 GHz 12 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 2935 |
BGA3015 |
1 GHz 15 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 2936 |
BGA3018 |
1 GHz 18 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 2937 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 2938 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 2939 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 2940 |
BGA420 |
Silicon MMIC Amplifier in SIEGET 25 t... |
Infineon |
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