| No. |
Part Name |
Description |
Manufacturer |
| 2911 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2912 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2913 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2914 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2915 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2916 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 2917 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 2918 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2919 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 2920 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 2921 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2922 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2923 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2924 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2925 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2926 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2927 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2928 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 2929 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 2930 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2931 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2932 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2933 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2934 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2935 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2936 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2937 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2938 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 2939 |
3N89 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 2940 |
3N96 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
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