No. |
Part Name |
Description |
Manufacturer |
2941 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
2942 |
2N4398 |
-40 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
2943 |
2N4399 |
-60 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
2944 |
2N5301 |
40 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
2945 |
2N5302 |
60 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
2946 |
2N5303 |
80 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
2947 |
2N5320 |
10 Watt NPN-PNP Silicon Power |
Fairchild Semiconductor |
2948 |
2N5321 |
10 Watt NPN-PNP Silicon Power |
Fairchild Semiconductor |
2949 |
2N5322 |
10 Watt NPN-PNP Silicon Power |
Fairchild Semiconductor |
2950 |
2N5323 |
10 Watt NPN-PNP Silicon Power |
Fairchild Semiconductor |
2951 |
2N5344 |
High voltage power PNP silicon transistor. 1 A, 250 V, 40 W. |
Motorola |
2952 |
2N5679 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
2953 |
2N5680 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
2954 |
2N5681 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
2955 |
2N5682 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
2956 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
2957 |
2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS |
Motorola |
2958 |
2N6166 |
NPN silicon RF power transistor 100 WATTS - 150MHz |
Motorola |
2959 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
2960 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
2961 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
2962 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
2963 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
2964 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
2965 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
2966 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
2967 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
2968 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
2969 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
2970 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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