| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
1N5407 |
800 V, 3 A, high current plastic silicon rectifier |
TRANSYS Electronics Limited |
| 2972 |
1N5407 |
3.0A SILICON RECTIFIER |
Won-Top Electronics |
| 2973 |
1N5407-T3 |
3.0A SILICON RECTIFIER |
Won-Top Electronics |
| 2974 |
1N5407-TB |
3.0A SILICON RECTIFIER |
Won-Top Electronics |
| 2975 |
1N5407G |
GLASS PASSIVATED JUNCTION RECTIFIER |
GOOD-ARK Electronics |
| 2976 |
1N5407G |
3.0 AMPS.GLASS PASSIVATED RECTIFIERS |
Jinan Gude Electronic Device |
| 2977 |
1N5407G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A |
Shanghai Sunrise Electronics |
| 2978 |
1N5408 |
GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts, Forward Current - 3.0Amperes |
Chenyi Electronics |
| 2979 |
1N5408 |
GENERAL PURPOSE PLASTIC RECTIFIER |
GOOD-ARK Electronics |
| 2980 |
1N5408 |
3.0 AMPS.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
| 2981 |
1N5408 |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 2982 |
1N5408 |
1000 V, 3 A, high current plastic silicon rectifier |
TRANSYS Electronics Limited |
| 2983 |
1N5408 |
3.0A SILICON RECTIFIER |
Won-Top Electronics |
| 2984 |
1N5408-T3 |
3.0A SILICON RECTIFIER |
Won-Top Electronics |
| 2985 |
1N5408-TB |
3.0A SILICON RECTIFIER |
Won-Top Electronics |
| 2986 |
1N5408G |
GLASS PASSIVATED JUNCTION RECTIFIER |
GOOD-ARK Electronics |
| 2987 |
1N5408G |
3.0 AMPS.GLASS PASSIVATED RECTIFIERS |
Jinan Gude Electronic Device |
| 2988 |
1N5408G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A |
Shanghai Sunrise Electronics |
| 2989 |
1N541 |
45 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2990 |
1N542 |
45 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2991 |
1N5518 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 2992 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2993 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2994 |
1N5518C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 2995 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2996 |
1N5519 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 2997 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 2998 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2999 |
1N5519C |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 3000 |
1N5519D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
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