| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
3KP9.0CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts |
Surge Components |
| 2972 |
3KP90 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) |
Panjit International Inc |
| 2973 |
3KP90 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts |
Surge Components |
| 2974 |
3KP90A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) |
Panjit International Inc |
| 2975 |
3KP90A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts |
Surge Components |
| 2976 |
3KP90C |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts |
Surge Components |
| 2977 |
3KP90CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) |
Panjit International Inc |
| 2978 |
3KP90CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts |
Surge Components |
| 2979 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 2980 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 2981 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 2982 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 2983 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 2984 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 2985 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 2986 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 2987 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 2988 |
3N246 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
| 2989 |
3N246 |
Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 2990 |
3N247 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
| 2991 |
3N247 |
Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 2992 |
3N248 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
| 2993 |
3N248 |
Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 2994 |
3N249 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
| 2995 |
3N249 |
Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 2996 |
3N250 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
| 2997 |
3N250 |
Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 2998 |
3N251 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
| 2999 |
3N251 |
Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 3000 |
3N252 |
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE |
General Semiconductor |
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