No. |
Part Name |
Description |
Manufacturer |
2971 |
2N6233 |
5A silicon 50W power, High-Voltage NPN transistor |
Motorola |
2972 |
2N6234 |
5A silicon 50W power, High-Voltage NPN transistor |
Motorola |
2973 |
2N6235 |
5A silicon 50W power, High-Voltage NPN transistor |
Motorola |
2974 |
2N6274 |
50A silicon 250W high-power, NPN transistor |
Motorola |
2975 |
2N6275 |
50A silicon 250W high-power, NPN transistor |
Motorola |
2976 |
2N6276 |
50A silicon 250W high-power, NPN transistor |
Motorola |
2977 |
2N6277 |
50A silicon 250W high-power, NPN transistor |
Motorola |
2978 |
2N6282 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
2979 |
2N6283 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
2980 |
2N6284 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
2981 |
2N6285 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
2982 |
2N6286 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
2983 |
2N6287 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
2984 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
2985 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
2986 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
2987 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
2988 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
2989 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
2990 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
2991 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
2992 |
2N6370 |
NPN silicon RF power transistor 10W (PEP) 30MHz |
Motorola |
2993 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2994 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
2995 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
2996 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
2997 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
2998 |
2N6486 |
75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
2999 |
2N6487 |
75.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
3000 |
2N6488 |
75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
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