| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
BG2001SM |
Case shape and dimensions |
ROHM |
| 2972 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 2973 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 2974 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 2975 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 2976 |
BGA425 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 �� block LNA / MIX Unconditionally stable) |
Siemens |
| 2977 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 2978 |
BGX13F-2H |
IMPATT Diode |
Siemens |
| 2979 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 2980 |
BGY12 |
IMPATT Diode |
Siemens |
| 2981 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2982 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2983 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2984 |
BGY12D-1F |
IMPATT Diode |
Siemens |
| 2985 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2986 |
BGY12E-1G |
IMPATT Diode |
Siemens |
| 2987 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2988 |
BGY12F-2H |
IMPATT Diode |
Siemens |
| 2989 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2990 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2991 |
BGY12F-2J |
IMPATT Diode |
Siemens |
| 2992 |
BGY13 |
IMPATT Diode |
Siemens |
| 2993 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2994 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2995 |
BGY13B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2996 |
BGY13D-1E |
IMPATT Diode |
Siemens |
| 2997 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2998 |
BGY13E-1F |
IMPATT Diode |
Siemens |
| 2999 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 3000 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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