| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
AH1897 |
Analog - Sensors - Hall Effect Switches - Omnipolar Hall Effect Switches |
Diodes |
| 2972 |
AH1897-FA-7 |
Analog - Sensors - Hall Effect Switches - Omnipolar Hall Effect Switches |
Diodes |
| 2973 |
AH1898 |
PROGRAMMABLE SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2974 |
AH1898-CA4-7 |
PROGRAMMABLE SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2975 |
AH1903 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR/OMNIPOLAR SELECTABLE HALL-EFFECT SWITCH |
Diodes |
| 2976 |
AH1903 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR/OMNIPOLAR SELECTABLE HALL-EFFECT SWITCH |
Diodes |
| 2977 |
AH3360 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2978 |
AH3360-FA-7 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2979 |
AH3360-FT4-7 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2980 |
AH3360-Z-7 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2981 |
AH41 |
BIPOLAR HALL-EFFECT POSITION SENSORS |
Diodes |
| 2982 |
AH922 |
UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2983 |
AH922CNTR-G1 |
UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2984 |
AH922NTR-G1 |
UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2985 |
AH9247 |
High Sensitivity Micropower Omnipolar Hall-Effect Switch |
Diodes |
| 2986 |
AH9248 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2987 |
AH9248NTR-G1 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2988 |
AH9248Z3TR-G1 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2989 |
AH9249 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2990 |
AH9249NTR-G1 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 2991 |
AJZ4558CMTR-E1 |
DUAL BIPOLAR OPERATIONAL AMPLIFIERS |
Diodes |
| 2992 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 2993 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 2994 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2995 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2996 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2997 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2998 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2999 |
AM27PS191 |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 3000 |
AM27PS19125B3A |
16,384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
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