| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
SD1100C12C |
1200V 1400A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 2972 |
SD1100C12L |
1200V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 2973 |
SD1100C16C |
1600V 1400A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 2974 |
SD1100C16L |
1600V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 2975 |
SD1100C20C |
2000V 1400A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 2976 |
SD1100C20L |
2000V 1170A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 2977 |
SD1100C25C |
2500V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 2978 |
SD1100C25L |
2500V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 2979 |
SD1100C30C |
3000V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 2980 |
SD1100C30L |
3000V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 2981 |
SD1100C32C |
3200V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 2982 |
SD1100C32L |
3200V 910A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 2983 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2984 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2985 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2986 |
SD1100P |
Rectifier: Schottky |
Taiwan Semiconductor |
| 2987 |
SD1101BD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2988 |
SD1101CHP |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2989 |
SD1101DD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2990 |
SD1101HD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2991 |
SD1102BD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2992 |
SD1102CHP |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2993 |
SD1102DD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2994 |
SD1102HD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 2995 |
SD1106AD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 2996 |
SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 2997 |
SD1106DD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 2998 |
SD1107BD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 2999 |
SD1107CHP |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 3000 |
SD1107DD |
100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
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