No. |
Part Name |
Description |
Manufacturer |
29971 |
HY51VS17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
29972 |
HY51VS17403HGT-7 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns |
Hynix Semiconductor |
29973 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
29974 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
29975 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
29976 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
29977 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
29978 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
29979 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
29980 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
29981 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
29982 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
29983 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
29984 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
29985 |
HY57V641620HGLT-5 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 200 MHz |
Hynix Semiconductor |
29986 |
HY57V641620HGLT-55 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz |
Hynix Semiconductor |
29987 |
HY57V641620HGLT-55I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz |
Hynix Semiconductor |
29988 |
HY57V641620HGLT-6 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz |
Hynix Semiconductor |
29989 |
HY57V641620HGLT-6I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz |
Hynix Semiconductor |
29990 |
HY57V641620HGLT-7 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz |
Hynix Semiconductor |
29991 |
HY57V641620HGLT-7I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz |
Hynix Semiconductor |
29992 |
HY57V641620HGLT-8 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 125 MHz |
Hynix Semiconductor |
29993 |
HY57V641620HGLT-H |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 133 MHz |
Hynix Semiconductor |
29994 |
HY57V641620HGLT-K |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 133 MHz |
Hynix Semiconductor |
29995 |
HY57V641620HGLT-S |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 100 MHz |
Hynix Semiconductor |
29996 |
I2181A-08SR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
29997 |
I2181A-08ST |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
29998 |
I2181A-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
29999 |
I2181A-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
30000 |
I2181B-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
| | | |