| No. |
Part Name |
Description |
Manufacturer |
| 3001 |
TRB100P |
Silicon rectifier 1A 100V |
Transitron Electronic |
| 3002 |
TRC100G |
Silicon rectifier 3A 100V |
Transitron Electronic |
| 3003 |
TRC100P |
Silicon rectifier 3A 100V |
Transitron Electronic |
| 3004 |
TRD100 |
Silicon rectifier 6A 100V |
Transitron Electronic |
| 3005 |
TRE100 |
Silicon rectifier 12A 100V |
Transitron Electronic |
| 3006 |
TRF100F |
Silicon rectifier 25A 100V |
Transitron Electronic |
| 3007 |
TRF100S |
Silicon rectifier 25A 100V |
Transitron Electronic |
| 3008 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 3009 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 3010 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 3011 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 3012 |
TVS410 |
Diode TVS Single 100V 150W 2-Pin Case A |
New Jersey Semiconductor |
| 3013 |
TXC01A10 to F10 |
Triac 100V 8.5A |
Siemens |
| 3014 |
TXC02A10 to F10 |
Triac 100V 4.2A |
Siemens |
| 3015 |
TXC03A10 to F10 |
Triac 100V 1.4A |
Siemens |
| 3016 |
TXN108G |
V(drm): 100V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 3017 |
TXN108K |
V(drm): 100V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 3018 |
TYN108G |
V(drm): 100V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 3019 |
TYN108K |
V(drm): 100V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 3020 |
UES2602 |
Diode Switching 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 3021 |
UES2602HR2 |
Diode Switching 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 3022 |
UES802 |
Diode Switching 100V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 3023 |
UF4002 |
1.0A, 100V ultra fast recovery rectifier |
MCC |
| 3024 |
UF4002GP |
1.0A, 100V ultra fast recovery rectifier |
MCC |
| 3025 |
UF5401 |
3.0A, 100V ultra fast recovery rectifier |
MCC |
| 3026 |
UF5401GP |
3.0A, 100V ultra fast recovery rectifier |
MCC |
| 3027 |
UFR302 |
Diode Switching 100V 3A 2-Pin DO-27 |
New Jersey Semiconductor |
| 3028 |
UFT10010 |
100A, 100V ultra fast recovery rectifier |
MCC |
| 3029 |
UFT14010 |
140A, 100V ultra fast recovery rectifier |
MCC |
| 3030 |
UFT7010 |
70A, 100V ultra fast recovery rectifier |
MCC |
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