| No. |
Part Name |
Description |
Manufacturer |
| 3001 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 3002 |
2N930 |
Low level amplifier transistor |
SGS-ATES |
| 3003 |
2N930 J |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3004 |
2N930 JTX |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3005 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 3006 |
2N930A |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3007 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 3008 |
2N956 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 3009 |
2N981 |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3010 |
2N997 |
NPN silicon transistor darlington amplifiers |
Sprague |
| 3011 |
2N998 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 3012 |
2N999 |
Darlington amplifier containing two NPN silicon anular transistors |
Motorola |
| 3013 |
2SA0683 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3014 |
2SA0684 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3015 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 3016 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 3017 |
2SA0719 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3018 |
2SA0720 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3019 |
2SA0720A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3020 |
2SA0777 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3021 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 3022 |
2SA0879 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3023 |
2SA0921 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3024 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3025 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3026 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 3027 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3028 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 3029 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 3030 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
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