No. |
Part Name |
Description |
Manufacturer |
3001 |
MIC950-5 |
Single edge controlled flip-flop |
ITT Industries |
3002 |
MM74C574MTC |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3003 |
MM74C574N |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3004 |
MM74C574SJ |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3005 |
MM74C574WM |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3006 |
MM74HC574 |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3007 |
MM74HC574MTC |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3008 |
MM74HC574MTCX |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3009 |
MM74HC574MTCX_NL |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3010 |
MM74HC574N |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3011 |
MM74HC574SJ |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3012 |
MM74HC574SJX |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3013 |
MM74HC574WM |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3014 |
MM74HC574WMX |
3-STATE Octal D-Type Edge-Triggered Flip-Flop |
Fairchild Semiconductor |
3015 |
MMFR-29C516E-31SB |
16 Bit Flow Through EDAC Error Detection And Correction unit |
Atmel |
3016 |
MMKR-29C516E-31SB |
16 Bit Flow Through EDAC Error Detection And Correction unit |
Atmel |
3017 |
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
3018 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3019 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3020 |
MRF18030AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3021 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3022 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
3023 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3024 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3025 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3026 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3027 |
MRF18085A |
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
3028 |
MRF18085ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3029 |
MRF18085AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
3030 |
MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
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