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Datasheets for JUNC

Datasheets found :: 8788
Page: | 97 | 98 | 99 | 100 | 101 | 102 | 103 | 104 | 105 |
No. Part Name Description Manufacturer
3001 2SK881 Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications TOSHIBA
3002 2SK930 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE Isahaya Electronics Corporation
3003 2SK932 N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications SANYO
3004 2SK937 N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications SANYO
3005 300EXD11 Silicon alloy diffused junction rectifier 2500V 300A TOSHIBA
3006 300FXD11 Silicon alloy diffused junction rectifier 3000V 300A TOSHIBA
3007 300LD11 Silicon alloy diffused junction rectifier 350A 800V TOSHIBA
3008 300ND11 Silicon alloy diffused junction rectifier 350A 1000V TOSHIBA
3009 300QD11 Silicon alloy diffused junction rectifier 350A 1200V TOSHIBA
3010 300TD11 Silicon alloy diffused junction rectifier 350A 1500V TOSHIBA
3011 300WD11 Silicon alloy diffused junction rectifier 350A 1800V TOSHIBA
3012 300YD11 Silicon alloy diffused junction rectifier 350A 2000V TOSHIBA
3013 30KW102 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3014 30KW102A 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3015 30KW108 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3016 30KW108A 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3017 30KW120 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3018 30KW120A 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3019 30KW132 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3020 30KW132A 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3021 30KW144 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3022 30KW144A 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3023 30KW156 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3024 30KW156A 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3025 30KW168 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3026 30KW168A 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3027 30KW180 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3028 30KW180A 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3029 30KW198 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
3030 30KW198A 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor


Datasheets found :: 8788
Page: | 97 | 98 | 99 | 100 | 101 | 102 | 103 | 104 | 105 |



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