No. |
Part Name |
Description |
Manufacturer |
3001 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
3002 |
SD1429-03 |
15W 12.5V Class C NPN RF transistor designed for UHF communications |
SGS Thomson Microelectronics |
3003 |
SD1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
3004 |
SD1495 |
870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
3005 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
3006 |
SD1500 |
NPN Planar Pulsed Transistor designed for use in L BAND radar applications |
SGS Thomson Microelectronics |
3007 |
SD1501 |
1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
3008 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
3009 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
3010 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
3011 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
3012 |
SD1512 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
3013 |
SD1513 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
3014 |
SD1514 |
NPN transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
3015 |
SD1520-3 |
NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
3016 |
SD1520-8 |
NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
3017 |
SD1526-01 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
3018 |
SD1526-08 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
3019 |
SD1527-08 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
3020 |
SD1527-8 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
3021 |
SD1528-6 |
NPN Power RF Transistor designed for IFF/DME TACAN applications |
SGS Thomson Microelectronics |
3022 |
SD1528-8 |
Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
3023 |
SD1530-1 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
3024 |
SD1530-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
3025 |
SD1536-03 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
3026 |
SD1536-08 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
3027 |
SD1536-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
3028 |
SD1536-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
3029 |
SD1540-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
3030 |
SD1541 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
| | | |