No. |
Part Name |
Description |
Manufacturer |
3001 |
2SC5716 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for High Resolution Display, Color TV |
TOSHIBA |
3002 |
2SC5717 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. |
TOSHIBA |
3003 |
2SC5748 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. |
TOSHIBA |
3004 |
2SC5801 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD |
NEC |
3005 |
2SC5801-T3 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD |
NEC |
3006 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
3007 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
3008 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
3009 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
3010 |
2SC5855 |
HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION |
TOSHIBA |
3011 |
2SC5886A |
Power transistor for high-speed switching applications |
TOSHIBA |
3012 |
2SC5906 |
Power transistor for high-speed switching applications |
TOSHIBA |
3013 |
2SC5930 |
Power transistor for high-speed switching applications |
TOSHIBA |
3014 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
3015 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
3016 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
3017 |
2SC5948 |
Power transistor for high-speed switching applications |
TOSHIBA |
3018 |
2SC5949 |
Power transistor for high-speed switching applications |
TOSHIBA |
3019 |
2SC5976 |
Power transistor for high-speed switching applications |
TOSHIBA |
3020 |
2SC6000 |
Power transistor for high-speed switching applications |
TOSHIBA |
3021 |
2SC6026CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
3022 |
2SC6026MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
3023 |
2SC6061 |
Power transistor for high-speed switching applications |
TOSHIBA |
3024 |
2SC6076 |
Power transistor for high-speed switching applications |
TOSHIBA |
3025 |
2SC6078 |
Power transistor for high-speed switching applications |
TOSHIBA |
3026 |
2SC608T |
Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
3027 |
2SC609T |
Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
3028 |
2SC6100 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
3029 |
2SC6102 |
NPN Bipolar Transistor for DC-DC Converters |
ON Semiconductor |
3030 |
2SC6124 |
Power transistor for high-speed switching applications |
TOSHIBA |
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