No. |
Part Name |
Description |
Manufacturer |
3001 |
BTS132 |
TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic) |
Siemens |
3002 |
BTS140 |
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Infineon |
3003 |
BTS140 |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Siemens |
3004 |
BTS140A |
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Infineon |
3005 |
BTS140A |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Siemens |
3006 |
BTS240A |
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Infineon |
3007 |
BTS240A |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
Siemens |
3008 |
BTS244Z |
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics) |
Infineon |
3009 |
BTS247Z |
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics) |
Infineon |
3010 |
BTS282Z |
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics) |
Infineon |
3011 |
BTX92 |
Controlled Avalanche Thyristor with high dV/dt and dl/dt capabilities, superseded by the BTW92 series |
Philips |
3012 |
BU126 |
NPN Silicon Power Transistor with a high reverse voltage |
Siemens |
3013 |
BU208 |
NPN Silicon Power Transistor with 1500V reverse voltage |
Siemens |
3014 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
3015 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
3016 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
3017 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
3018 |
BU4209F |
Voltage Detector with Adjustable Delay Time |
ROHM |
3019 |
BU4209F-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
3020 |
BU4209FVE |
Voltage Detector with Adjustable Delay Time |
ROHM |
3021 |
BU4209FVE-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
3022 |
BU4209G |
Voltage Detector with Adjustable Delay Time |
ROHM |
3023 |
BU4209G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
3024 |
BU4210F |
Voltage Detector with Adjustable Delay Time |
ROHM |
3025 |
BU4210F-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
3026 |
BU4210FVE |
Voltage Detector with Adjustable Delay Time |
ROHM |
3027 |
BU4210FVE-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
3028 |
BU4210G |
Voltage Detector with Adjustable Delay Time |
ROHM |
3029 |
BU4210G-TR |
Voltage Detector with Adjustable Delay Time |
ROHM |
3030 |
BU4211F |
Voltage Detector with Adjustable Delay Time |
ROHM |
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