No. |
Part Name |
Description |
Manufacturer |
3001 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
3002 |
2N6577 |
15 AMPERE NPN DARLINGTON POWER TRAN |
General Semiconductor |
3003 |
2N6577 |
15A NPN silicon darlington 120W power transistor |
Motorola |
3004 |
2N6577 |
Trans Darlington Power Transistor 90V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
3005 |
2N6577 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
3006 |
2N6578 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3007 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
3008 |
2N6578 |
15 AMPERE NPN DARLINGTON POWER TRAN |
General Semiconductor |
3009 |
2N6578 |
15A NPN silicon darlington 120W power transistor |
Motorola |
3010 |
2N6578 |
Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
3011 |
2N6578 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
3012 |
2N6594 |
PNP SILICON POWER TRANSISTOR |
Boca Semiconductor Corporation |
3013 |
2N6594 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3014 |
2N6594 |
POWER TRANSISTORS(12A,40V,100W) |
MOSPEC Semiconductor |
3015 |
2N6594 |
PNP Power Transistor TO-3 |
National Semiconductor |
3016 |
2N6594 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
3017 |
2N6609 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
3018 |
2N6609 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3019 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
3020 |
2N6609 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
3021 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
3022 |
2N6648 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3023 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
3024 |
2N6648 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
3025 |
2N6649 |
Leaded Power Transistor Darlington |
Central Semiconductor |
3026 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
3027 |
2N6649 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
3028 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
3029 |
2N665 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
3030 |
2N6650 |
Leaded Power Transistor Darlington |
Central Semiconductor |
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