| No. |
Part Name |
Description |
Manufacturer |
| 3001 |
AH1897 |
Analog - Sensors - Hall Effect Switches - Omnipolar Hall Effect Switches |
Diodes |
| 3002 |
AH1897-FA-7 |
Analog - Sensors - Hall Effect Switches - Omnipolar Hall Effect Switches |
Diodes |
| 3003 |
AH1898 |
PROGRAMMABLE SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3004 |
AH1898-CA4-7 |
PROGRAMMABLE SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3005 |
AH1903 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR/OMNIPOLAR SELECTABLE HALL-EFFECT SWITCH |
Diodes |
| 3006 |
AH1903 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR/OMNIPOLAR SELECTABLE HALL-EFFECT SWITCH |
Diodes |
| 3007 |
AH3360 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3008 |
AH3360-FA-7 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3009 |
AH3360-FT4-7 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3010 |
AH3360-Z-7 |
HIGH SENSITIVITY MICROPOWER UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3011 |
AH41 |
BIPOLAR HALL-EFFECT POSITION SENSORS |
Diodes |
| 3012 |
AH922 |
UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3013 |
AH922CNTR-G1 |
UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3014 |
AH922NTR-G1 |
UNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3015 |
AH9247 |
High Sensitivity Micropower Omnipolar Hall-Effect Switch |
Diodes |
| 3016 |
AH9248 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3017 |
AH9248NTR-G1 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3018 |
AH9248Z3TR-G1 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3019 |
AH9249 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3020 |
AH9249NTR-G1 |
HIGH SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH |
Diodes |
| 3021 |
AJZ4558CMTR-E1 |
DUAL BIPOLAR OPERATIONAL AMPLIFIERS |
Diodes |
| 3022 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 3023 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 3024 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 3025 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3026 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3027 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3028 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3029 |
AM27PS191 |
16/384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
| 3030 |
AM27PS19125B3A |
16,384-BIT (2048 x 8) BIPOLAR PROM |
Advanced Micro Devices |
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