No. |
Part Name |
Description |
Manufacturer |
3001 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
3002 |
KM416V4100BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
3003 |
KM416V4100CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
3004 |
KM416V4100CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
3005 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
3006 |
KM416V4100CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
3007 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
3008 |
KM416V4100CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
3009 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
3010 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
3011 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
3012 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
3013 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
3014 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
3015 |
KM416V4104CS-50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
3016 |
KM416V4104CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
3017 |
KM416V4104CS-L45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
3018 |
KM416V4104CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
3019 |
KM416V4104CS-L60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
3020 |
KM48S8030CT-G_F10 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
3021 |
KM48S8030CT-G_F7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz |
Samsung Electronic |
3022 |
KM48S8030CT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
3023 |
KM48S8030CT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
3024 |
KM48S8030CT-G_FL |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
3025 |
KM48S8030DT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
3026 |
KM48S8030DT-G_FA |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz |
Samsung Electronic |
3027 |
KM48S8030DT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
3028 |
KM48S8030DT-G_FL |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
3029 |
KP4040 |
Photocoupler, CTR min 600%, isolation 5000V, for telephone sets, interface with various power supply circuits |
Cosmo Electronics |
3030 |
KP5010A |
Photocoupler, CTR 600 to 2000%, isolation 5000V, for telephone sets, interface with various power supply circuits |
Cosmo Electronics |
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