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Datasheets for 3

Datasheets found :: 1128
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No. Part Name Description Manufacturer
301 COM7915T Hi-Rel Fixed Voltage 3-Terminal Negative Regulator International Rectifier
302 CXA1635S/M Stereo Pre-Amplifier/Power-Amplifier with 3V SONY
303 DA28F320J5-100 Intel StrataFlash memory 32 Mbit. Access speed 100 ns Intel
304 DRV8313RHH 2.5A Three Phase Brushless DC Motor Driver (PWM Ctrl) 36-VQFN -40 to 85 Texas Instruments
305 DRV8313RHHR 2.5A Three Phase Brushless DC Motor Driver (PWM Ctrl) 36-VQFN -40 to 85 Texas Instruments
306 DS1089LU-4GL 18.432 MHz, 3.3 V, center spread-spectrum econoscillator MAXIM - Dallas Semiconductor
307 DS83C520-ECL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
308 DS83C520-ENL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
309 DS83C520-MCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
310 DS83C520-MNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
311 DS83C520-QCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
312 DS83C520-QNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
313 DS87C520-ECL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
314 DS87C520-ENL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
315 DS87C520-MCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
316 DS87C520-MNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
317 DS87C520-QCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
318 DS87C520-QNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
319 DS87C520-WCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
320 DS90CR484 48-Bit LVDS Channel Link SER/DES 33 - 112 MHz National Semiconductor
321 E28F320J5-100 Intel StrataFlash memory 32 Mbit. Access speed 100 ns Intel
322 FDD8870_F085 N-Channel PowerTrench� MOSFET 30V, 160A, 3.9m? Fairchild Semiconductor
323 FDD8896_F085 N-Channel PowerTrench� MOSFET 30V, 94A, 5.7m? Fairchild Semiconductor
324 FR302G 100 V, 3 A, fast GPP diode Leshan Radio Company
325 FR303G 200 V, 3 A, fast GPP diode Leshan Radio Company
326 GBE1300NMSFPTRX1,25G Transceivers by Form-factor MSA - SFP - Single Mode 1300 nm, 1.25GBit/s GBE, 1.0625 GBit/s FC, LC, 10 km, 3.3V Infineon
327 GC5322 Wideband Transmit IC Solution with integrated Digital Predistortion, Digital Upconversion, 352-BGA -40 to 85 Texas Instruments
328 GC5322IZND Wideband Transmit IC Solution with integrated Digital Predistortion, Digital Upconversion, 352-BGA -40 to 85 Texas Instruments
329 GC5325 Wideband Digital Predistortion Transmit Processor 352-BGA -40 to 85 Texas Instruments
330 GC5325IZND Wideband Digital Predistortion Transmit Processor 352-BGA -40 to 85 Texas Instruments


Datasheets found :: 1128
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