| No. |
Part Name |
Description |
Manufacturer |
| 301 |
APTGT75A170D1 |
Phase Leg - IGBT |
Advanced Power Technology |
| 302 |
APTGT75DA120D1 |
Boost Chopper - IGBT |
Advanced Power Technology |
| 303 |
APTGT75DA170D1 |
Boost Chopper - IGBT |
Advanced Power Technology |
| 304 |
APTGT75SK120D1 |
Buck Chopper - IGBT |
Advanced Power Technology |
| 305 |
APTGT75SK170D1 |
Buck Chopper - IGBT |
Advanced Power Technology |
| 306 |
APTGT75TA120P |
Triple Phase Leg - IGBT |
Advanced Power Technology |
| 307 |
APTGT75TDU120P |
Triple Dual Common Source - IGBT |
Advanced Power Technology |
| 308 |
APTGT75X120BTP3 |
3 Phase Bridge + Input Rectifier Bridge + Brake + NTC - IGBT |
Advanced Power Technology |
| 309 |
APTGT75X120E3 |
3 Phase Bridge - IGBT |
Advanced Power Technology |
| 310 |
APTGT75X120TE3 |
3 Phase Bridge - IGBT |
Advanced Power Technology |
| 311 |
APTLGF140U120T |
Single Switch Intelligent Power Module - IGBT |
Advanced Power Technology |
| 312 |
APTLGF210U120T |
Single Switch Intelligent Power Module - IGBT |
Advanced Power Technology |
| 313 |
APTLGF280U120T |
Single Switch Intelligent Power Module - IGBT |
Advanced Power Technology |
| 314 |
APTLGF70U120T |
Single Switch Intelligent Power Module - IGBT |
Advanced Power Technology |
| 315 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 316 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 317 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 318 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 319 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 320 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 321 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 322 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 323 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 324 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 325 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 326 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 327 |
BK-10V10T |
Nickel Metal Hydride Batteries - Infrastructure type |
Panasonic |
| 328 |
BK-10V1S |
Nickel Metal Hydride Batteries - Infrastructure type |
Panasonic |
| 329 |
BROCHURE |
Signal Acquisition - Instrumentation Amplifier Brochure |
Burr Brown |
| 330 |
BUX48-D |
SWITCHMODE - II Series NPN Silicon Power Transistors |
ON Semiconductor |
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