| No. |
Part Name |
Description |
Manufacturer |
| 301 |
PSMN016-100PS |
N-channel 100V 16 mΩ standard level MOSFET in TO-220 |
Nexperia |
| 302 |
PSMN016-100PS |
N-channel 100V 16 mΩ standard level MOSFET in TO-220 |
NXP Semiconductors |
| 303 |
PSMN016-100XS |
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A) |
Nexperia |
| 304 |
PSMN016-100XS |
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A) |
NXP Semiconductors |
| 305 |
R15KP100 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 306 |
R15KP100A |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 307 |
R15KP100C |
Diode TVS Single Bi-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 308 |
R15KP100CA |
Diode TVS Single Bi-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 309 |
R15KP12 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 310 |
R15KP13 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 311 |
R15KP14 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 312 |
R15KP14A |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 313 |
R15KP14C |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 314 |
R15KP14CA |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 315 |
R15KP15 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 316 |
R15KP16 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 317 |
R15KP17 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 318 |
R15KP18 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 319 |
RDHA701CD10A2NX |
Radiation Hardened 100V 1.0A Dual Single Pole Single Throw normally open Solid-State Relay |
International Rectifier |
| 320 |
RDHA701FP10A8CK |
Radiation Hardened 100V 1.5A Octal Buffered and Non-Buffered Solid-State Relays with intermediate response |
International Rectifier |
| 321 |
RDHA701FP10A8QK |
Rad Hard 100V 1.5A Octal Buffered and Non-Buffered Solid-State Relays with Controlled Response |
International Rectifier |
| 322 |
RDHA710FR10A1NX |
Radiation Hardened Single 100V 10A Solid-State Relay with Buffered Inputs and Fast Response |
International Rectifier |
| 323 |
RDHA710SE10A2FK |
Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs and Fast Response |
International Rectifier |
| 324 |
RDHA710SE10A2QK |
Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs Controlled Response and 5.0V Logic Drive Voltage |
International Rectifier |
| 325 |
RDHA710SE10A2SK |
Radiation Hardened Dual 100V 10A Solid-State Relay with Buffered Inputs Controlled Response and 3.3V Logic Drive Voltage |
International Rectifier |
| 326 |
RFL1N10 |
1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 327 |
RFL1N10L |
1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 328 |
RFM12N10 |
Trans MOSFET N-CH 100V 12A |
New Jersey Semiconductor |
| 329 |
RFM12N10L |
Trans MOSFET N-CH 100V 12A |
New Jersey Semiconductor |
| 330 |
RFM12N18 |
Trans MOSFET N-CH 100V 12A |
New Jersey Semiconductor |
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