| No. |
Part Name |
Description |
Manufacturer |
| 301 |
IRAM136-1061A |
10A - 12A, 600V Integrated Power Module for Advanced Motor Drive applications |
International Rectifier |
| 302 |
IRAM136-1061A2 |
10A - 12A, 600V Integrated Power Module for Advanced Motor Drive applications |
International Rectifier |
| 303 |
IRDC3894 |
Reference Design kit for the IR3894M a 600kHz, 12A SupIRBuck Synchronous Buck Converter |
International Rectifier |
| 304 |
IRF132 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
| 305 |
IRF133 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
| 306 |
IRF230 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 307 |
IRF230-233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 308 |
IRF231 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 309 |
IRF232 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 310 |
IRF233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 311 |
IRF353 |
Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 312 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 313 |
IRF452 |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 314 |
IRF452 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A |
Siliconix |
| 315 |
IRF452R |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 316 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 317 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 318 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
| 319 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 320 |
IRF532 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 321 |
IRF532 |
N-channel MOSFET, 100V, 12A |
SGS Thomson Microelectronics |
| 322 |
IRF532 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
| 323 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 324 |
IRF533 |
Trans MOSFET N-CH 80V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 325 |
IRF533 |
N-channel MOSFET, 80V, 12A |
SGS Thomson Microelectronics |
| 326 |
IRF533 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
| 327 |
IRF631 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 328 |
IRF632 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 329 |
IRF633 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 330 |
IRF9130 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
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