| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 302 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 303 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
| 304 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 305 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 306 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 307 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 308 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 309 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 310 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 311 |
2N5223 |
NPN Small Signal General Purpose Amplifier & Oscillator |
Fairchild Semiconductor |
| 312 |
2N5223 |
Low-Level General purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 313 |
2N5225 |
NPN-PNP small signal general purpose complementary amplifier . |
Fairchild Semiconductor |
| 314 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 315 |
2N5226 |
NPN-PNP small signal general purpose complementary amplifier . |
Fairchild Semiconductor |
| 316 |
2N5226 |
Medium Power PNP Silicon Amplifier transistor |
ITT Semiconductors |
| 317 |
2N5227 |
PNP small signal general purpose amplifier & oscillator. |
Fairchild Semiconductor |
| 318 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
| 319 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 320 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 321 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 322 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 323 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 324 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 325 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 326 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 327 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 328 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 329 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 330 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
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