| No. |
Part Name |
Description |
Manufacturer |
| 301 |
28C256ATC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 302 |
28C256ATC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 303 |
28C256ATC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 304 |
28C256ATI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 305 |
28C256ATI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 306 |
28C256ATI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 307 |
28C256ATI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 308 |
28C256ATI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 309 |
28C256ATI-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 310 |
28C256ATI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 311 |
28C256ATI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 312 |
28C256ATM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 313 |
28C256ATM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 314 |
28C256ATM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 315 |
28C256ATM-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 316 |
28C256ATM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 317 |
28C256ATM-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 318 |
28C256ATM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 319 |
28C256ATM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 320 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
| 321 |
28C64A-15 |
64K - BIT CMOS E2PROM |
Catalyst Semiconductor |
| 322 |
28C64A-20 |
64K - BIT CMOS E2PROM |
Catalyst Semiconductor |
| 323 |
28C64A-25 |
64K - BIT CMOS E2PROM |
Catalyst Semiconductor |
| 324 |
28C64AI-15 |
64K - BIT CMOS E2PROM |
Catalyst Semiconductor |
| 325 |
28C64AI-20 |
64K - BIT CMOS E2PROM |
Catalyst Semiconductor |
| 326 |
28C64AI-25 |
64K - BIT CMOS E2PROM |
Catalyst Semiconductor |
| 327 |
28LV256JC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 328 |
28LV256JC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 329 |
28LV256JC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 330 |
28LV256JC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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