| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N2484 |
0.360W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.050A Ic, 250 hFE. |
Continental Device India Limited |
| 302 |
2N2484 |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 303 |
2N2484UA |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 304 |
2N2484UB |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 305 |
2N2845 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 306 |
2N2891 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 307 |
2N2894A |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 308 |
2N2895 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 309 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 310 |
2N2904 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 311 |
2N2904A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 312 |
2N2904A |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 313 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 314 |
2N2905A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 315 |
2N2906 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 316 |
2N2906A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 317 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 318 |
2N2907 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 319 |
2N2907A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 320 |
2N2993 |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package |
SemeLAB |
| 321 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 322 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 323 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 324 |
2N3053A |
7.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.700A Ic, 25 hFE. |
Continental Device India Limited |
| 325 |
2N3055 |
115.000W Power NPN Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 326 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 327 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 328 |
2N3174 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 329 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 330 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
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