| No. |
Part Name |
Description |
Manufacturer |
| 301 |
CT75AM-12 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER � UPS USE |
Mitsubishi Electric Corporation |
| 302 |
F1710-1000 TO 1901 |
Class Y2, AC250V, Insulated Leads |
Vishay |
| 303 |
F1724-4000 TO 4901 |
Class X1, AC440V, Insulated Leads |
Vishay |
| 304 |
F1724-4200 TO 4264 |
Class X1, AC440V, Insulated Leads |
Vishay |
| 305 |
F1774-2000 TO 2400 |
Class X2, AC275V, Insulated Leads |
Vishay |
| 306 |
F1774-2200 TO 2264 |
Class X2, AC275V, Insulated Leads |
Vishay |
| 307 |
F1774-3000 TO 3400 |
Class X2, AC300V, Insulated Leads |
Vishay |
| 308 |
F1774-3200 TO 3264 |
Class X2, AC300V, Insulated Leads |
Vishay |
| 309 |
F1774-4000 TO 4400 |
Class X2, AC440V, Insulated Leads |
Vishay |
| 310 |
F1774-4200 TO 4264 |
Class X2, AC440V, Insulated Leads |
Vishay |
| 311 |
F1779 |
Class X2, AC275V, Insulated Leads |
Vishay |
| 312 |
FAN8800 |
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET |
Fairchild Semiconductor |
| 313 |
GT10J321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
| 314 |
GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
| 315 |
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
TOSHIBA |
| 316 |
KA3162 |
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET |
Fairchild Semiconductor |
| 317 |
MFE3001 |
Silicon N-channel insulated-gate field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 318 |
MGW20N120 |
OBSOLETE - Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 319 |
MM018-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 320 |
MM118-06F |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 321 |
MM118-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 322 |
MM118-XX |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
| 323 |
MN81 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistors |
Texas Instruments |
| 324 |
MN82 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistors |
Texas Instruments |
| 325 |
MN83 |
N-Channel Enhancement-Type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 326 |
MN84 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 327 |
MN85 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 328 |
MP91 |
P-Channel Enhancement-Type insulated-gate field-effect transistor |
Texas Instruments |
| 329 |
MP92 |
P-Channel Enhancement-Type insulated-gate Field-Effect transistor |
Texas Instruments |
| 330 |
MP93 |
P-Channel Enhancement-Type insulated-gate Field-Effect transistor |
Texas Instruments |
| | | |
