No. |
Part Name |
Description |
Manufacturer |
301 |
ONET8521T |
A 9 GHz, 2.4 KOhms Transimpedance Amplifier with RSSI 0-DIESALE -40 to 100 |
Texas Instruments |
302 |
ONET8521TY |
A 9 GHz, 2.4 KOhms Transimpedance Amplifier with RSSI 0-DIESALE -40 to 100 |
Texas Instruments |
303 |
ONET8541T |
A 9 GHz, 4 KOhms Transimpedance Amplifier with RSSI |
Texas Instruments |
304 |
ONET8541TY |
A 9 GHz, 4 KOhms Transimpedance Amplifier with RSSI 1-DIESALE -40 to 100 |
Texas Instruments |
305 |
ONET8541TYS4 |
A 9 GHz, 4 KOhms Transimpedance Amplifier with RSSI 0-WAFERSALE -40 to 100 |
Texas Instruments |
306 |
PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
307 |
PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
308 |
PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
309 |
PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
310 |
PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
311 |
PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
312 |
PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
313 |
PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
314 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
315 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
316 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
317 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
318 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
319 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
320 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
321 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
322 |
PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
323 |
PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
324 |
PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
325 |
PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
326 |
PBRP113ZT |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
327 |
PBRP113ZT |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
328 |
PBRP113ZT |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
329 |
PBRP113ZT |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
330 |
PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
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