| No. |
Part Name |
Description |
Manufacturer |
| 301 |
AUIRF7739L2TR1 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 270 amperes optimized with low on resistance |
International Rectifier |
| 302 |
AUIRF7759L2 |
A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 303 |
AUIRF7759L2TR1 |
A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. |
International Rectifier |
| 304 |
AUIRF7769L2 |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance |
International Rectifier |
| 305 |
AUIRF7769L2TR |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance |
International Rectifier |
| 306 |
AUIRF7799L2 |
A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance |
International Rectifier |
| 307 |
AUIRF7799L2TR |
A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance |
International Rectifier |
| 308 |
AUIRF8736M2 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance |
International Rectifier |
| 309 |
AUIRF8736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance |
International Rectifier |
| 310 |
AUIRL7732S2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 58 amperes optimized with low on resistance |
International Rectifier |
| 311 |
AUIRL7736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 112 amperes optimized with low on resistance |
International Rectifier |
| 312 |
AUIRL7736M2TR1 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 112 amperes optimized with low on resistance |
International Rectifier |
| 313 |
AUIRL7766M2 |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 51 amperes optimized with low on resistance |
International Rectifier |
| 314 |
AUIRL7766M2TR1 |
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 51 amperes optimized with low on resistance |
International Rectifier |
| 315 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 316 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 317 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 318 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 319 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 320 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 321 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 322 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 323 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 324 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 325 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 326 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 327 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 328 |
BAS70 |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 329 |
BAS70KFILM |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 330 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
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