| No. |
Part Name |
Description |
Manufacturer |
| 301 |
STP20N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 302 |
STP20N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 303 |
STP30N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 304 |
STP30N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 305 |
STP30N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 306 |
STP30N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 307 |
STP30N06FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 308 |
STP30N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 309 |
STP50N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 310 |
STP50N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 311 |
STP50N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 312 |
STP50N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 313 |
STP50N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 314 |
STP50N06LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 315 |
STP50N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 316 |
STP60N06-14 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 317 |
STP60N06-14 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 318 |
STP60N06-14 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 319 |
STP80N06-10 |
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 320 |
STW80N06-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 321 |
STW80N06-10 |
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 322 |
STW80N06-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 323 |
SUB40N06-25L |
N-Channel Enhancement-Mode MOSFETs, Logic Level |
Vishay |
| 324 |
SUB60N06-18 |
N-Channel Enhancement-Mode Trans |
Vishay |
| 325 |
SUB70N06-14 |
N-Channel Enhancement-Mode Trans |
Vishay |
| 326 |
SUD40N06-25L |
N-Channel Enhancement-Mode Trans, Logic Level |
Vishay |
| 327 |
SUD50N06-07L |
MOSFETs |
Vishay |
| 328 |
SUD50N06-09L |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
Vishay |
| 329 |
SUD50N06-12 |
N-Channel 60-V (D-S) 175C MOSFET |
Vishay |
| 330 |
SUD50N06-16 |
N-Channel 60-V (D-S) 175C MOSFET |
Vishay |
| | | |
