| No. |
Part Name |
Description |
Manufacturer |
| 301 |
UPD442000AGU-BB70X-9KH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 302 |
UPD442000AGU-BC10X-9JH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 303 |
UPD442000AGU-BC10X-9KH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 304 |
UPD442000AGU-BC70X-9JH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 305 |
UPD442000AGU-BC70X-9KH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 306 |
UPD442000AGU-DD10X-9JH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 307 |
UPD442000AGU-DD10X-9KH |
2M-bit(256K-word x 8-bit) Low Power SRAM |
NEC |
| 308 |
UPD442012AGY-BB70X-MJH |
2M-bit(128K-word x 16-bit) Low Power SRAM |
NEC |
| 309 |
UPD442012AGY-BC10X-MJH |
2M-bit(128K-word x 16-bit) Low Power SRAM |
NEC |
| 310 |
UPD442012AGY-BC70X-MJH |
2M-bit(128K-word x 16-bit) Low Power SRAM |
NEC |
| 311 |
UPD442012AGY-DD10X-MJH |
2M-bit(128K-word x 16-bit) Low Power SRAM |
NEC |
| 312 |
UPD444012AGY-B10X-MJH |
4M-bit(256K-word x 16-bit) Low Power SRAM |
NEC |
| 313 |
UPD444012AGY-B70X-MJH |
4M-bit(256K-word x 16-bit) Low Power SRAM |
NEC |
| 314 |
UPD444012AGY-C10X-MJH |
4M-bit(256K-word x 16-bit) Low Power SRAM |
NEC |
| 315 |
UPD444012AGY-C70X-MJH |
4M-bit(256K-word x 16-bit) Low Power SRAM |
NEC |
| 316 |
UPD448012GY-B10X-MJH |
8M-bit(512K-word x 16-bit) Low power SRAM |
NEC |
| 317 |
UPD448012GY-B70X-MJH |
8M-bit(512K-word x 16-bit) Low power SRAM |
NEC |
| 318 |
UPD448012GY-C10X-MJH |
8M-bit(512K-word x 16-bit) Low power SRAM |
NEC |
| 319 |
UPD448012GY-C70X-MJH |
8M-bit(512K-word x 16-bit) Low power SRAM |
NEC |
| 320 |
UPD448012GY-D10X-MJH |
8M-bit(512K-word x 16-bit) Low power SRAM |
NEC |
| 321 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 322 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 323 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 324 |
X76F640X-2,7 |
64K (8K x 8 + 32 x 8) Secure SerialFlash |
Xicor |
| 325 |
X76F640X-2.7 |
Secure SerialFlash |
Xicor |
| 326 |
XC4000X-SERIES |
Programmable Gate Arrays |
Xilinx |
| | | |
