| No. |
Part Name |
Description |
Manufacturer |
| 301 |
ISPLSI1016EA-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 302 |
ISPLSI1016EA-200LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 303 |
ISPLSI1016EA-200LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 304 |
KDV216E |
TV Tuning |
Korea Electronics (KEC) |
| 305 |
KDZ16EV |
Zener Diode |
Korea Electronics (KEC) |
| 306 |
KP-3216EC |
3.2x1.6mm SMD CHIP LED LAMPS |
Kingbright Electronic |
| 307 |
KPC-3216EC |
The High Effciency Red sourse color devices are made with Galium Arsenide Phosphide Orange Light Emitting Diode |
Kingbright Electronic |
| 308 |
KPT-3216EC |
3.2x1.6mm SUPER THIN SMD CHIP LED LAMPS |
Kingbright Electronic |
| 309 |
KRA316E |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 310 |
KRC416E |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 311 |
L-316EIR1BC |
RECEIVER MODULE |
PARA Light |
| 312 |
L-316EIR1BC |
3.0mm INFRARED EMITTING DIODE |
PARA Light |
| 313 |
L-316EIR1C |
RECEIVER MODULE |
PARA Light |
| 314 |
L-316EIR1C |
3.0mm INFRARED EMITTING DIODE |
PARA Light |
| 315 |
L-516EIR1BC |
RECEIVER MODULE |
PARA Light |
| 316 |
L-516EIR1C |
RECEIVER MODULE |
PARA Light |
| 317 |
L-516EIR2C |
5.0 mm infrared emitting diode |
PARA Light |
| 318 |
L-516EIR3C |
5.0 mm infrared emitting diode |
PARA Light |
| 319 |
L-516EIR3D2 |
5.0 mm infrared emitting diode |
PARA Light |
| 320 |
L-516EIR4C |
5.0 mm infrared emitting diode |
PARA Light |
| 321 |
LC75816E |
1/8 to 1/10 Duty Dot Matrix LCD Display Controllers/Drivers with Key Input Function |
SANYO |
| 322 |
LCE16E3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 323 |
LM3500TL-16EV |
Synchronous Step-up DC/DC Converter for White LED Applications |
National Semiconductor |
| 324 |
LM3501TL-16EV |
Synchronous Step-up DC/DC Converter for White LED Applications |
National Semiconductor |
| 325 |
LMX2316EVAL |
1.2 GHz PLLatinum Low Power Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 326 |
LPT16ED |
30 GHz SiGe Bipolar Transistor Final |
SiGe Semiconductor |
| 327 |
LT1616ES6 |
600mA, 1.4MHz Step-Down Switching Regulator in SOT-23 |
Linear Technology |
| 328 |
LT1616ES6#PBF |
600mA, 1.4MHz Step-Down Switching Regulator in SOT-23 |
Linear Technology |
| 329 |
LT1616ES6#TR |
600mA, 1.4MHz Step-Down Switching Regulator in SOT-23 |
Linear Technology |
| 330 |
LT1616ES6#TRM |
600mA, 1.4MHz Step-Down Switching Regulator in SOT-23 |
Linear Technology |
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