No. |
Part Name |
Description |
Manufacturer |
301 |
IRF6216TRPBF |
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
302 |
IRF6216TRPBF-1 |
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
303 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
304 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
305 |
IRF7316TR |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
306 |
IRF7316TRPBF |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
307 |
IRF7316TRPBF-1 |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
308 |
IRF7416TR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
309 |
IRF7416TRPBF |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
310 |
IRF7416TRPBF-1 |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
311 |
IRFH8316TR2PBF |
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package |
International Rectifier |
312 |
IRFH8316TRPBF |
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package |
International Rectifier |
313 |
K6F1616T6B |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
314 |
K6F1616T6B-EF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
315 |
K6F1616T6B-EF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
316 |
K6F1616T6B-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
317 |
K6F1616T6B-TF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
318 |
K6F1616T6B-TF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
319 |
K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
320 |
K6F1616T6C-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
321 |
K6F1616T6C-FF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
322 |
K6F1616T6C-FF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
323 |
K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
324 |
K6F3216T6M-F |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
325 |
K6F8016T6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
326 |
K6F8016T6C-FF55 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
327 |
K6F8016T6C-FF70 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
328 |
K6X4016T3F |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
329 |
K6X4016T3F-B |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
330 |
K6X4016T3F-F |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
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